The RF Line

Microwave Pulse Power Transistor

Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.

• Guaranteed Performance @ 1090 MHz

Output Power = 350 Watts Peak

Gain = 8.5 dB Min, 9.0 dB (Typ)

• 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Hermetically Sealed Package

• Silicon Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

• Internal Input and Output Matching

• Characterized using Mode–S Pulse Format