DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

DDR3

• High Speed and Performance\n• Low Power, Efficient DRAM Solution\n;

DDR3

• High Speed and Performance\n• Low Power, Efficient DRAM Solution;

DDR3

• High Speed and Performance\n• Low Power, Efficient DRAM Solution;

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages

4Gb E-die DDR3L SDRAM

文件：1.70364 Mbytes Page：72 Pages

4Gb E-die DDR3L SDRAM

文件：1.70364 Mbytes Page：72 Pages

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages

4Gb E-die DDR3L SDRAM

文件：1.70364 Mbytes Page：72 Pages

4Gb E-die DDR3L SDRAM

文件：1.70364 Mbytes Page：72 Pages

4Gb E-die DDR3L SDRAM

文件：1.70364 Mbytes Page：72 Pages

4Gb E-die DDR3L SDRAM

文件：1.70364 Mbytes Page：72 Pages

4Gb E-die DDR3L SDRAM

文件：1.70364 Mbytes Page：72 Pages

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

包装：卷带（TR） 描述：DDR3-1600 4GB (256MX16)1.25NS CL 集成电路（IC） 存储器

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件：522.69 Kbytes Page：65 Pages

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件：522.69 Kbytes Page：65 Pages

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件：522.69 Kbytes Page：65 Pages

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件：522.69 Kbytes Page：65 Pages

POWER DIVIDERS 0쨘 : 2-WAY

文件：128.509 Kbytes Page：5 Pages