4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

DDR3

三代双倍数据率同步动态随机存储器

DDR3

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

包装：卷带（TR） 描述：DDR3-1600 4GB (256MX16)1.25NS CL 集成电路（IC） 存储器

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)