4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

DDR3

三代双倍数据率同步动态随机存储器

DDR3

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

包装：卷带（TR） 描述：DDR3-1600 4GB (256MX16)1.25NS CL 集成电路（IC） 存储器

4Gb E-die DDR3L SDRAM

文件：1.98169 Mbytes Page：71 Pages

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages