位置:K4B4G0846B-MCF8 > K4B4G0846B-MCF8详情

K4B4G0846B-MCF8中文资料

厂家型号

K4B4G0846B-MCF8

文件大小

1085.4Kbytes

页面数量

59

功能描述

DDP 4Gb B-die DDR3 SDRAM Specification

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

K4B4G0846B-MCF8数据手册规格书PDF详情

Key Features

• JEDEC standard 1.5V ± 0.075V Power Supply

• VDDQ = 1.5V ± 0.075V

• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,

667MHz fCK for 1333Mb/sec/pin

• 8 Banks

• Posted CAS

• Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10

• Programmable Additive Latency: 0, CL-2 or CL-1 clock

• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6

(DDR3-1066) and 7 (DDR3-1333)

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting

address “000” only), 4 with tCCD = 4 which does not allow seamless

read or write [either On the fly using A12 or MRS]

• Bi-directional Differential Data-Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin

(RZQ : 240 ohm ± 1)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at

85°C < TCASE < 95 °C

• Asynchronous Reset

• Package : 78 balls FBGA - x4/x8

• All of Lead-Free products are compliant for RoHS

• All of products are Halogen-free

K4B4G0846B-MCF8产品属性

  • 类型

    描述

  • 型号

    K4B4G0846B-MCF8

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    DDP 4Gb B-die DDR3 SDRAM Specification

更新时间:2025-8-13 18:38:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
13+
BGA
47
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG
23+
BGA
2547
原厂原装正品
SAMSUNG
2022+
BGA78
20000
只做原装进口现货.假一罚十
SAMSUNG
FBGA
1324
正品原装--自家现货-实单可谈
SAMSUNG
23+
FBGA
50000
全新原装正品现货,支持订货
SAMSUNG
25+23+
FBGA
12519
绝对原装正品全新进口深圳现货
SAMSUNG
2016+
BGA
3360
只做原装,假一罚十,公司优势内存型号!
Samsung
1645+
DDR3512Mx8PC1600CL11FBGA
12500
只做原装进口,假一罚十
SAMSUNG
24+
FBGA78
90000
专营三星全线品牌假一赔万原装进口货可开增值税发票
Samsung
25+
FBGA78
12588
原装现货真实库存