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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K4B4G1646B | 4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 |  |   |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 | | | |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 | | | |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 | | | |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 | | | |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 | | | |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 | | | |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 | | | |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 | | | |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung Group 三星三星半导体 | | | |
PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon | SamsungSamsung Group 三星三星半导体 | | | |
4GbE-dieDDR3LSDRAM 文件：1.98169 Mbytes Page：71 Pages | SamsungSamsung Group 三星三星半导体 | | |
K4B4G1646B产品属性
- 类型
描述
- 型号
K4B4G1646B
- 制造商
Samsung Semiconductor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
21+ |
BGA |
10000 |
全新原装 公司现货 价优 |
|||
21+ |
QFN32 |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
SAMSUNG |
2016+ |
BGA |
5000 |
全新原装现货,只售原装,假一赔十! |
|||
SAMSUNG |
17+ |
FBGA |
9800 |
全新进口原装现货假一罚十 |
|||
SAMSUNG |
2017+ |
BGA |
24589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
SAMSUNG |
726222 |
||||||
SAMSUNG/三星 |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
|||
SAMSUNG/三星 |
13+ |
BGA |
100 |
只做正品,原装现货实单来谈 |
|||
SAMSUNG/三星 |
21+ |
BGA |
9800 |
只做原装正品假一赔十!正规渠道订货! |
K4B4G1646B芯片相关品牌
K4B4G1646B规格书下载地址
K4B4G1646B参数引脚图相关
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- K4B4G0846D-BCK0000
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- K4B2G1646Q-BMH9000
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K4B4G1646B数据表相关新闻
K4B2G1646Q-BCK0 现货热卖！！！！
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DdatasheetPDF页码索引
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