4Gb E-die DDR3L SDRAM

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三代双倍数据率同步动态随机存储器

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages

DDR3 SDRAM Memory

文件：1.38881 Mbytes Page：32 Pages