位置:K4B4G0846B > K4B4G0846B详情

K4B4G0846B中文资料

厂家型号

K4B4G0846B

文件大小

1085.4Kbytes

页面数量

59

功能描述

DDP 4Gb B-die DDR3 SDRAM Specification

数据手册

下载地址一下载地址二到原厂下载

生产厂商

SAMSUNG

K4B4G0846B数据手册规格书PDF详情

Key Features

• JEDEC standard 1.5V ± 0.075V Power Supply

• VDDQ = 1.5V ± 0.075V

• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,

667MHz fCK for 1333Mb/sec/pin

• 8 Banks

• Posted CAS

• Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10

• Programmable Additive Latency: 0, CL-2 or CL-1 clock

• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6

(DDR3-1066) and 7 (DDR3-1333)

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting

address “000” only), 4 with tCCD = 4 which does not allow seamless

read or write [either On the fly using A12 or MRS]

• Bi-directional Differential Data-Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin

(RZQ : 240 ohm ± 1)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at

85°C < TCASE < 95 °C

• Asynchronous Reset

• Package : 78 balls FBGA - x4/x8

• All of Lead-Free products are compliant for RoHS

• All of products are Halogen-free

K4B4G0846B产品属性

  • 类型

    描述

  • 型号

    K4B4G0846B

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    DDP 4Gb B-die DDR3 SDRAM Specification

更新时间:2025-10-30 14:14:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
存储器
FBGA
40264
SAMSUNG存储芯片K4B4G0846B-HYK0即刻询购立享优惠#长期有货
SAMSUNG
24+
BGA
4000
原装原厂代理 可免费送样品
SAMSUNG
2021+
FBGA
6800
原厂原装,欢迎咨询
SAMSUNG
2430+
BGA
8540
只做原装正品假一赔十为客户做到零风险!!
SAMSUNG/三星
24+
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10000
只有原装
SAMSUNG
16+
PLCC18
4000
进口原装现货/价格优势!
SAMSUNG
11+
BGA
1
SAMSUNG
2016+
FBGA
2000
只做原装,假一罚十,公司优势内存型号!
SAMSUNG
24+
BGA
9800
全新进口原装现货假一罚十
SAMSUNG
24+
FBGA
5000
只做原装公司现货