型号 功能描述 生产厂家&企业 LOGO 操作
K4B4G1646Q

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件:522.69 Kbytes Page:65 Pages

Samsung

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

Samsung

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

Samsung

三星

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件:522.69 Kbytes Page:65 Pages

Samsung

三星

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件:522.69 Kbytes Page:65 Pages

Samsung

三星

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件:522.69 Kbytes Page:65 Pages

Samsung

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

Samsung

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

Samsung

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

Samsung

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

Samsung

三星

DDR3 SDRAM Memory

文件:1.38881 Mbytes Page:32 Pages

Samsung

三星

更新时间:2025-8-9 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG(三星)
24+
NA/
8735
原厂直销,现货供应,账期支持!
SAMSUNG
2016+
BGA
12800
全新原装现货,只售原装,假一赔十!
SAMSUNG/三星
25+
BGA
880000
明嘉莱只做原装正品现货
SAMSUNG/三星
22+
BGA
100000
代理渠道/只做原装/可含税
SAMSUNG/三星
25+
BGA
54658
百分百原装现货 实单必成
SAMSUNG
存储器
BGA
40297
SAMSUNG存储芯片K4B4G1646Q-HYKO即刻询购立享优惠#长期有货
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG
14+
BGA
9
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
21+
BGA
3000
百域芯优势 实单必成 可开13点增值税发票
SAMSUNG
2430+
BGA
8540
只做原装正品假一赔十为客户做到零风险!!

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