型号 功能描述 生产厂家 企业 LOGO 操作
K4B4G1646Q

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件:522.69 Kbytes Page:65 Pages

SAMSUNG

三星

K4B4G1646Q

4Gb Q-die DDR3L SDRAM

SAMSUNG

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

SAMSUNG

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

SAMSUNG

三星

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件:522.69 Kbytes Page:65 Pages

SAMSUNG

三星

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件:522.69 Kbytes Page:65 Pages

SAMSUNG

三星

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

文件:522.69 Kbytes Page:65 Pages

SAMSUNG

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

SAMSUNG

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

SAMSUNG

三星

4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

SAMSUNG

三星

PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

SAMSUNG

三星

DDR3 SDRAM Memory

文件:1.38881 Mbytes Page:32 Pages

SAMSUNG

三星

更新时间:2026-3-12 10:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
2430+
BGA
8540
只做原装正品假一赔十为客户做到零风险!!
SAMSUNG
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG/三星
2023+
BGA
6895
原厂全新正品旗舰店优势现货
SAMSUNG(三星)
25+
N/A
21000
原装正品现货,原厂订货,可支持含税原型号开票。
SAMSUNG/三星
25+
BGA
13800
原装,请咨询
SAMSUNG/三星
2026+
BGA
23976
进口原托盘现货
SAMSUNG/三星
24+
FBGA96
45500
专供内存闪存单片机。只做原装
SAMSUNG
24+
BGA
6525
绝对原装现货,价格低,欢迎询购!
SAMSUNG(三星)
25+
N/A
21000
原装正品现货,原厂订货,可支持含税原型号开票。

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