N-Channel Power MOSFETs, 12A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC convert

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

FEATURE N channel in a plastic TO220 package. They are intended for use in high speed switching, uninterruptible power supply, motor control, audio amplifiers, industrial actuators. DC-DC & DC-AC converters for telecom, industrial and consumer environment. Complianc

TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

Description Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Parall

N-channel mosfet transistor

Features • With TO-220 package • Low on-state and thermal resistance • Fast switching • VDSS=200V; RDS(ON)≤0.4Ω ;ID=9A • 1.gate 2.drain 3.source

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ◆ Dynamic dv/dt Rating ◆ Repetitive Avalanche Rated ◆ Fast Switching ◆ Ease of Paralleling ◆ Simple Drive

N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. General features ■ Extremely high dv/dt capability ■ Very low intrinsic

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.25 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 °C ■ APPLICATION ORIENTED CHARACHTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CO

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

N-Channel Power MOSFET

DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wi

N - CHANNEL 200V - 0.35W - 9A - TO-220/FP MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY] process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS n HIGH CURRENT SWITCHING n UNINTERRUPTIBLE POWER SUPPL

Power MOSFET

Power MOSFET VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A

N-Channel Power Mosfets

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场效应管

Power MOSFET

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

N-channel 200V - 0.35廓 - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET

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SEMICONDUCTORS

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FIELD EFFECT POWER TRANSISTOR

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N-channel TrenchMOS transistor

文件：923.6 Kbytes Page：3 Pages

FIELD EFFECT POWER TRANSISTOR

文件：910.79 Kbytes Page：2 Pages

Power MOSFET

文件：283.3 Kbytes Page：9 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.333 Ω (Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=9A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω (Max) • Fast Switching Speed • Low Drive Requirement APPLICATIONS • This device is n-channel, enhancement mode, power MOSFET designed especia

N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID= 9A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.4Ω (Max) • Fast Switching Speed APPLICATIONS • Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conver

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e

N-channel mosfet transistor

♦ Features · With TO-220F package · Low on-stateand thermal resistance · Fast switching · VDSS=200V; RDS(ON)≤0.4Ω;ID=9A · 1.gate 2.drain 3.source

isc N-Channel MOSFET Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. • FEATURES • RDS(on) =0.4Ω • 6A and 200V • single pulse avalanche energy rated • SOA is Power- Dissipation Limited • Linear Transfer

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.25 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 °C ■ APPLICATION ORIENTED CHARACHTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CO

N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. General features ■ Extremely high dv/dt capability ■ Very low intrinsic

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental sh

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental sh

N-Channel 200 V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

Fast Switching Speed

DESCRIPTION ● Drain Current –ID=9.3A@ TC=25℃ ● Drain Source Voltage- : VDSS= 200V(Min) ● Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ● Fast Switching Speed ● Low Drive Requirement APPLICATIONS ● This device is n-channel, enhancement mode, power MOSFET designed especially

N-Channel MOSFET Transistor

DESCRIPTION ● Drain Current –ID=9.3A@ TC=25℃ ● Drain Source Voltage- : VDSS= 200V(Min) ● Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ● Fast Switching Speed ● Low Drive Requirement APPLICATIONS ● This device is n-channel, enhancement mode, power MOSFET designed especially

isc N-Channel MOSFET Transistor

• DESCRITION • Efficient and reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable op

N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applicatio

Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

N-Channel 200 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch • DT-TrenchPower MOSFET