DESCRIPTION

·Drain Current –ID=9A@ TC=25℃

·Drain Source Voltage-

: VDSS= 200V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.4Ω(Max)

·Fast Switching Speed

·Low Drive Requirement

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·This device is n-channel, enhancement mode, power MOSFET

designed especially for high power, high speed applications,

such as switching power supplies,UPS, AC and DC motor controls,

relay and solenoid drivers and high energy pulse circuits.