General Description

These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features

• 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V

• Low gate charge ( typical 22 nC)

• Low Crss ( typical 22 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability