DESCRIPTION

• Drain Current –ID=9A@ TC=25℃

• Drain Source Voltage-

: VDSS= 200V(Min)

• Static Drain-Source On-Resistance

: RDS(on) = 0.4Ω (Max)

• Fast Switching Speed

• Low Drive Requirement

APPLICATIONS

• This device is n-channel, enhancement mode, power MOSFET

designed especially for high power, high speed applications,

such as switching power supplies,UPS, AC and DC motor controls, relay

and solenoid drivers and high energy pulse circuits.