N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.25 Ω

■ AVALANCE RUGGED TECHNOLOGY

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100 °C

■ APPLICATION ORIENTED CHARACHTERIZATION

APPLICATIONS

■ HIGH SPEED SWITCHING

■ UNINTERRUPTIBLE POWER SUPPLY (UPS)

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ iNDUSTRIAL ACTUATORS

■ DC-DC & DC-AC COVERTERS FOR TELECOM,

INDUSTRIAL AND CONSUMER ENVIRONMENT.

■ PARTICULARLY SUITABLE FOR ELECTRONIC

FLUORESCENT LAMP BALLASTS