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IRF630NPBF价格
参考价格：￥1.2519
型号：IRF630NPBF 品牌：INTERNATIONAL 备注：这里有IRF630NPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRF630NPBF批发/采购报价，IRF630NPBF行情走势销售排行榜，IRF630NPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF630NPBF | Advanced Process Technology Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know | IRF |   | |
IRF630NPBF | Advanced Process Technology 文件：340.74 Kbytes Page：11 Pages | IRF | | |
IRF630NPBF | HEXFET Power MOSFET 文件：292.16 Kbytes Page：11 Pages | IRF | | |
IRF630NPBF | Advanced Process Technology 文件：340.74 Kbytes Page：11 Pages | IRF | | |
Advanced Process Technology 文件：340.74 Kbytes Page：11 Pages | IRF | | ||
9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso | WXDH 东海半导体 | | ||
Fast switching Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive | GOFORD 谷峰半导体 | | ||
Fast switching Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Low Frequencies 文件：141.01 Kbytes Page：2 Pages | OSCILENT | | ||
COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS 文件：87.55 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |
IRF630NPBF产品属性
- 类型
描述
- 型号
IRF630NPBF
- 功能描述
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
INFINEON/英飞凌 |
25+ |
TO-220 |
32000 |
INFINEON/英飞凌全新特价IRF630NPBF即刻询购立享优惠#长期有货 |
|||
IR |
1215+ |
TO-220 |
150000 |
全新原装,绝对正品,公司大量现货供应. |
|||
IR |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
Infineon |
QFN |
21+ |
15000 |
原厂代理原装正品 |
|||
IR |
24+ |
TO-220 |
30000 |
只做正品原装现货 |
|||
IR |
25+ |
TO-220AB |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
INFINEON/英飞凌 |
24+ |
TO-220AB |
60000 |
||||
INFINEON/英飞凌 |
24+ |
TO220AB |
8000 |
原装现货 |
|||
IR |
23+ |
TO-220 |
4500 |
原装正品假一罚百!可开增票! |
IRF630NPBF芯片相关品牌
IRF630NPBF规格书下载地址
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DdatasheetPDF页码索引
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