Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

isc N-Channel MOSFET Transistor

• DESCRITION • Efficient and reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable op

Fast Switching Speed

DESCRIPTION ● Drain Current –ID=9.3A@ TC=25℃ ● Drain Source Voltage- : VDSS= 200V(Min) ● Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ● Fast Switching Speed ● Low Drive Requirement APPLICATIONS ● This device is n-channel, enhancement mode, power MOSFET designed especially

N-Channel MOSFET Transistor

DESCRIPTION ● Drain Current –ID=9.3A@ TC=25℃ ● Drain Source Voltage- : VDSS= 200V(Min) ● Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ● Fast Switching Speed ● Low Drive Requirement APPLICATIONS ● This device is n-channel, enhancement mode, power MOSFET designed especially

N-Channel MOSFET Transistor

文件：339.05 Kbytes Page：2 Pages

Power MOSFET

文件：173.94 Kbytes Page：2 Pages

HEXFET Power MOSFET

文件：240.54 Kbytes Page：11 Pages

TO-220 MOS FETs 场效应管

200V N-Channel MOSFET

N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applicatio

Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

HEXFET Power MOSFET

文件：240.54 Kbytes Page：11 Pages

N-Channel MOSFET Transistor

文件：339.05 Kbytes Page：2 Pages

HEXFET Power MOSFET

文件：240.54 Kbytes Page：11 Pages

Power MOSFET

文件：173.94 Kbytes Page：2 Pages

HEXFET Power MOSFET

文件：292.16 Kbytes Page：11 Pages

Advanced Process Technology

文件：340.74 Kbytes Page：11 Pages

Advanced Process Technology

文件：340.74 Kbytes Page：11 Pages

Advanced Process Technology

文件：340.74 Kbytes Page：11 Pages

HEXFET Power MOSFET

文件：292.16 Kbytes Page：11 Pages

Advanced Process Technology

文件：340.74 Kbytes Page：11 Pages

Advanced Process Technology

文件：340.74 Kbytes Page：11 Pages

Power MOSFET

文件：173.94 Kbytes Page：2 Pages

HEXFET Power MOSFET

文件：240.54 Kbytes Page：11 Pages

HEXFET Power MOSFET

文件：292.16 Kbytes Page：11 Pages

Advanced Process Technology

文件：340.74 Kbytes Page：11 Pages

Advanced Process Technology

文件：340.74 Kbytes Page：11 Pages

Advanced Process Technology

文件：340.74 Kbytes Page：11 Pages

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

文件：87.55 Kbytes Page：1 Pages

Low Frequencies

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