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位置：首页 > IC中文资料第1078页 > IRF630N

IRF630N价格

参考价格：￥4.8098

型号：IRF630NLPBF 品牌：International 备注：这里有IRF630N多少钱，2025年最近7天走势，今日出价，今日竞价，IRF630N批发/采购报价，IRF630N行情走势销售排行榜，IRF630N报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF630N

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF
IRF630N

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF630N

iscN-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF630N

FastSwitchingSpeed

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF630N

N-ChannelMOSFETTransistor

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
IRF630N

N-ChannelMOSFETTransistor

文件：339.05 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF630N

PowerMOSFET

文件：173.94 Kbytes Page：2 Pages

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
IRF630N

HEXFETPowerMOSFET

文件：240.54 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NL

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF
IRF630NL

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF630NL

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-262packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •Switchingapplicatio

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF630NLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF
IRF630NPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF
IRF630NS

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF
IRF630NS

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF630NSPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF
IRF630NSTRLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF
IRF630N_04

HEXFETPowerMOSFET

文件：240.54 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630N_18

N-ChannelMOSFETTransistor

文件：339.05 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF630NL

HEXFETPowerMOSFET

文件：240.54 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NL

PowerMOSFET

文件：173.94 Kbytes Page：2 Pages

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
IRF630NLPBF

HEXFETPowerMOSFET

文件：292.16 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NLPBF

AdvancedProcessTechnology

文件：340.74 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NLPBF

AdvancedProcessTechnology

文件：340.74 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NPBF

AdvancedProcessTechnology

文件：340.74 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NPBF

HEXFETPowerMOSFET

文件：292.16 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NPBF

AdvancedProcessTechnology

文件：340.74 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NPBF_15

AdvancedProcessTechnology

文件：340.74 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NS

PowerMOSFET

文件：173.94 Kbytes Page：2 Pages

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
IRF630NS

HEXFETPowerMOSFET

文件：240.54 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NSPBF

HEXFETPowerMOSFET

文件：292.16 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NSPBF

AdvancedProcessTechnology

文件：340.74 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NSPBF

AdvancedProcessTechnology

文件：340.74 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
IRF630NSRPBF

AdvancedProcessTechnology

文件：340.74 Kbytes Page：11 Pages

IRF

International Rectifier

IRF
630

9A200VN-channelEnhancementModePowerMOSFET

1Description TheseN-channelEnhancedVDMOSFETs,isobtainedby theself-alignedplanartechnologywhichreducethe conductionloss,improveswitchingperformanceand enhancetheavalancheenergy.Whichaccordswiththe RoHSstandard. 2Features ●FastSwitching ●LowONResistance(Rdso

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
630A

Fastswitching

Features •Fastswitching •100%avalanchetested •Improveddv/dtcapability Application •DCMotorControlandClassDAmplifier •UninterruptiblePowerSupply(UPS) •Automotive

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD
630A

Fastswitching

Features ·Fastswitching ·100avalanchetested ·Improveddv/dtcapability Application ·DCMotorControlandClassDAmplifier ·UninterruptiblePowerSupply(UPS) ·Automotive

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
630

COMPACTDIGITALTHERMOMETERS&THERMO-HYGROMETERS

文件：87.55 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
630

LowFrequencies

文件：141.01 Kbytes Page：2 Pages

OSCILENT

Oscilent Corporation

OSCILENT

IRF630N产品属性

  • 类型

    描述

  • 型号

    IRF630N

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

IRF630N供应商更多...

更新时间：2025-7-6 14:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
千层芯半导体(深圳)有限公司
IRF630NPBF
IR
24+
TO-220
80000
代理进口原装现货假一赔十
询价
深圳市莱克讯科技有限公司
IRF630NSTRRPBF
IR
1923+
TO-263
6896
原装进口现货库存专业工厂研究所配单供货
询价
深圳市一线半导体有限公司
IRF630NS
IR
24+
D2-Pak
8866
询价
深圳市中远芯科技有限公司
IRF630NPBF
IR
17+
TO-220
4086
原装现货
询价
深圳兆威电子有限公司
IRF630NSPBF
IR
22+
TO-263
11914
原装正品现货
询价
深圳市凌旭科技有限公司
IRF630NPBF
INFINEON
21+
SMD
16230
十年信誉,只做原装,有挂就有现货!
询价
深圳宇航军工半导体有限公司
IRF630NPBF
IR
19+
TO-220
74585
原厂代理渠道,每一颗芯片都可追溯原厂；
询价
深圳市达恩科技有限公司
IRF630NSTRLPBF
Infineon
24+
NA
3526
进口原装正品优势供应
询价
深圳市纳艾斯科技有限公司
IRF630NSTRLPBF
INFINEON/英飞凌
24+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
中天科工半导体（深圳）有限公司
IRF630NSTRLPBF
Infineon Technologies
24+
D2PAK
30000
晶体管-分立半导体产品-原装正品
询价

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