Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

N-Channel 200 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch • DT-TrenchPower MOSFET

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )

文件：2.10068 Mbytes Page：8 Pages

9A,200V Heatsink N-Channel Type Power MOSFET

文件：1.03175 Mbytes Page：6 Pages

9A,200V Heatsink N-Channel Type Power MOSFET

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

Low Frequencies

文件：141.01 Kbytes Page：2 Pages

COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

文件：87.55 Kbytes Page：1 Pages