IRF630NL价格

参考价格:¥4.8098

型号:IRF630NLPBF 品牌:International 备注:这里有IRF630NL多少钱,2025年最近7天走势,今日出价,今日竞价,IRF630NL批发/采购报价,IRF630NL行情走势销售排行榜,IRF630NL报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF630NL

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

IRF630NL

N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF630NL

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262 packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applicatio

ISC

无锡固电

IRF630NL

HEXFET Power MOSFET

文件:240.54 Kbytes Page:11 Pages

IRF

IRF630NL

Power MOSFET

文件:173.94 Kbytes Page:2 Pages

TEL

东电电子

Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

IRF

Advanced Process Technology

文件:340.74 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:340.74 Kbytes Page:11 Pages

IRF

HEXFET Power MOSFET

文件:292.16 Kbytes Page:11 Pages

IRF

9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

WXDH

东海半导体

Fast switching

Features • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive

GOFORD

谷峰半导体

Fast switching

Features · Fast switching · 100 avalanche tested · Improved dv/dt capability Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

ETCList of Unclassifed Manufacturers

未分类制造商

Low Frequencies

文件:141.01 Kbytes Page:2 Pages

OSCILENT

COMPACT DIGITAL THERMOMETERS & THERMO-HYGROMETERS

文件:87.55 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRF630NL产品属性

  • 类型

    描述

  • 型号

    IRF630NL

  • 功能描述

    MOSFET N-CH 200V 9.3A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-9 14:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-262
8866
IR
23+
TO-262
59387
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
11+
TO-262
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
IR
24+
TO-262
100
只做原厂渠道 可追溯货源
IR
23+
TO-262
50000
全新原装正品现货,支持订货
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR
2015+
TO-262
12500
全新原装,现货库存长期供应
IR
23+
TO-262
50000
全新原装正品现货,支持订货
IR
11+PBF
TO-262
500
现货

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