N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

N-CHANNEL ENHANCEMENT-MODE SILICON GATE

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS(on) = 0.140 Ω

N-CHANNEL POWER MOSFETS

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

N-Channel Power MOSFETs Avalanche Energy Rated

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

N?묬hannel Enhancement?묺ode Silicon Gate

TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed fo

14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

TO-220-3L Plastic-Encapsulate MOSFETS

FEATURES Low RDS(on) VGS Rated at ± 20V Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n DC-DC & DC-AC CONVERTER n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.)

Mosfet

Power MOSFET

N−Channel Enhancement−Mode Silicon Gate

SEMICONDUCTORS

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Power MOSFET

文件：282.16 Kbytes Page：9 Pages

14.0A 100V N CHANNEL POWER MOSFET

文件：356.3 Kbytes Page：6 Pages

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

文件：187.75 Kbytes Page：3 Pages

N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET

文件：281.94 Kbytes Page：3 Pages

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

Advanced Process Technology

-60V P-Channel MOSFET

Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON)

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

HEXFET Power MOSFET

Advanced Process Technology

-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.092 Ω (Typ.)

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.12 Ω ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ AVALANCHE RUGGED TECHNOLOGY ■ APPLICATION ORIENTED CHARACTERIZATION ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE APPLICAT

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package. 1. ’Trench’technology 2. Low on-state resistance 3. Fast switching 4.

Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

22A, 100V, 0.064 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.09Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operati

Isc N-Channel MOSFET Transistor

• FEATURES • With To-262 package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p