丝印代码：IRF5305；-60V P-Channel MOSFET

Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON)

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr

P-Channel MOSFET Transistor

文件：334.6 Kbytes Page：2 Pages

丝印代码：IRF5305S；-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

丝印代码：IRF5305S；-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

Advanced Process Technology

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

Advanced Process Technology

isc P-Channel MOSFET Transistor

文件：272.87 Kbytes Page：2 Pages

HEXFET Power MOSFET

HEXFET Power MOSFET

文件：179.17 Kbytes Page：8 Pages

Advanced Process Technology

文件：188.38 Kbytes Page：9 Pages

丝印代码：D2PAK；isc P-Channel MOSFET Transistor

文件：297.21 Kbytes Page：2 Pages

Advanced Process Technology

文件：706.19 Kbytes Page：11 Pages

Advanced Process Technology

文件：706.19 Kbytes Page：11 Pages

ADVANCED PROCESS TECHNOLOGY

文件：706.19 Kbytes Page：11 Pages

HEXFET짰 Power MOSFET

文件：366.79 Kbytes Page：12 Pages

丝印代码：D2PAK；P-Channel 60 V (D-S) MOSFET

文件：1.59267 Mbytes Page：7 Pages

Advanced Process Technology

文件：706.19 Kbytes Page：11 Pages

2.5 V to 5.5 V, 230uA, Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5332/AD5333/AD5342/AD5343 are dual 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 230 µA at 3 V, and feature a power-down pin, PD that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can dr

2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

2.5 V to 5.5 V, 500 uA, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs

文件：427.29 Kbytes Page：20 Pages

2.5 V to 5.5 V, 500 uA, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs

文件：427.29 Kbytes Page：20 Pages

2.5 V to 5.5 V, 500 uA, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs

文件：427.29 Kbytes Page：20 Pages