IRF5305价格

参考价格:¥5.6246

型号:IRF5305LPBF 品牌:INTERNATIONAL 备注:这里有IRF5305多少钱,2025年最近7天走势,今日出价,今日竞价,IRF5305批发/采购报价,IRF5305行情走势销售排行榜,IRF5305报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF5305

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, pr

IRF

IRF5305

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

KERSEMI

IRF5305

-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

EVVOSEMI

翊欧

IRF5305

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

IRF5305

P-Channel MOSFET Transistor

文件:334.6 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

KERSEMI

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

IRF

HEXFET Power MOSFET

IRF

Advanced Process Technology

KERSEMI

-60V P-Channel MOSFET

Features * VDS (V) = -60V * ID = -31A (VGS = -10V) * RDS(ON)

UMW

友台半导体

-55V P-Channel MOSFET

Features VDS (V) =-55V ID = -31A (VGS = -10V) RDS(ON)

EVVOSEMI

翊欧

Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

IRF

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

KERSEMI

Advanced Process Technology

KERSEMI

HEXFET Power MOSFET

IRF

-55V P-Channel MOSFET

Features * VDS (V) =-55V * ID = -31A (VGS = -10V) * RDS(ON)

UMW

友台半导体

isc P-Channel MOSFET Transistor

文件:272.87 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Infineon

英飞凌

HEXFET Power MOSFET

文件:179.17 Kbytes Page:8 Pages

IRF

Advanced Process Technology

文件:188.38 Kbytes Page:9 Pages

IRF

-55V 单个 P 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Infineon

英飞凌

Advanced Process Technology

文件:706.19 Kbytes Page:11 Pages

IRF

isc P-Channel MOSFET Transistor

文件:297.21 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:706.19 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:706.19 Kbytes Page:11 Pages

IRF

HEXFET짰 Power MOSFET

文件:366.79 Kbytes Page:12 Pages

IRF

P-Channel 60 V (D-S) MOSFET

文件:1.59267 Mbytes Page:7 Pages

VBSEMI

微碧半导体

Advanced Process Technology

文件:706.19 Kbytes Page:11 Pages

IRF

T-1 3/4 Tricolor Right Angle LED Assembly

Features • Block mounting, height and spacing alignment saves assembly cost and time. • Super Brite LEDs-high intensity light output • Press-in pin secures block to board for solder • Press-in pin secures block to board for soldering.ing. • Standoffs prevent flux entrapment.

VCC

Visual Communications Company

T-1 3/4 Tricolor Right Angle LED Assembly

Features • Block mounting, height and spacing alignment saves assembly cost and time. • Super Brite LEDs-high intensity light output • Press-in pin secures block to board for soldering. • Press-in pin secures block to board for soldering. • Standoffs prevent flux entrapment.

CML

BNC (Female) To SMD Grabber Test Clips

FEATURES: • Converts BNC (male) cables / connectors to SMD test clips for test versatility. • Grabber pincer and BNC center contact are gold plated excellent corrosion resistance and low contact resistance to ensure test signal integrity. • BNC connector is molded directly to the wire for pull

POMONA

Pomona Electronics

Rod, Expanding/Cross-Plate Anchor, 1/2in X 5ft Thimbleye

文件:366.84 Kbytes Page:1 Pages

HUBBELL

HUBBELL INCORPORATED

24 (7/32) AWG Tinned Copper

文件:413.16 Kbytes Page:4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

IRF5305产品属性

  • 类型

    描述

  • 型号

    IRF5305

  • 功能描述

    MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-25 19:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
TO-263
32000
INFINEON/英飞凌全新特价IRF5305STRLPBF即刻询购立享优惠#长期有货
INFINEON
22+
TO-263-2
4000
原装正品可支持验货,欢迎咨询
IR
21+
TO-220
6880
只做原装,质量保证
IR
24+
TO-263
8500
只做原装正品假一赔十为客户做到零风险!!
IR
23+
TO-263
12500
全新原装现货,假一赔十
IR
23+
TO-220
5540
原厂原装正品
INFINEON/英飞凌
24+
TO-263
18400
原装进口假一罚十
INFINEON/英飞凌
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
IR
24+
TO-263
501299
免费送样原盒原包现货一手渠道联系
INFINEON
25+
TO-220
918000
明嘉莱只做原装正品现货

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