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IRF530NS中文资料
IRF530NS数据手册规格书PDF详情
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRF530NS产品属性
- 类型
描述
- 型号
IRF530NS
- 功能描述
MOSFET N-CH 100V 17A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
8816 |
保证进口原装现货假一赔十 |
|||
IR |
25+ |
TO-263 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INFINEON |
22+ |
TO-263-2 |
800 |
原装正品可支持验货,欢迎咨询 |
|||
IR |
15+ |
原厂原装 |
8700 |
进口原装现货假一赔十 |
|||
IR |
16+ |
TO-263 |
6323 |
全新原装/深圳现货库2 |
|||
IR |
24+ |
D2PAK-3 |
3580 |
原装现货/15年行业经验欢迎询价 |
|||
INFINEON |
20+ |
TO-263 |
50000 |
||||
INFINEON |
2036+ |
1100 |
全新原装!优势库存热卖中! |
||||
INFINEON/英飞凌 |
24+ |
TO-263 |
3000 |
只做原厂渠道 可追溯货源 |
|||
IR/INFINEON |
23+ |
TO-263 |
98900 |
原厂原装正品现货!! |
IRF530NSTRRPBF 价格
参考价格：￥4.5114
IRF530NS 资料下载更多...
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