IRF530NS价格

参考价格:¥2.2547

型号:IRF530NSPBF 品牌:INTERNATIONAL 备注:这里有IRF530NS多少钱,2025年最近7天走势,今日出价,今日竞价,IRF530NS批发/采购报价,IRF530NS行情走势销售排行榜,IRF530NS报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF530NS

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF
IRF530NS

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF
IRF530NS

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF530NS

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF530NS

N-Channel100-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF

AdvancedProcessTechnology

文件:284.9 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

AdvancedProcessTechnology

文件:284.9 Kbytes Page:11 Pages

IRF

International Rectifier

IRF

Pentium4ProcessorsSupportingHyper-ThreadingTechnology

Introduction TheIntel®Pentium®4processoron90nmprocessinthe775-landpackageisafollowontothePentium4processorinthe478-pinpackagewithenhancementstotheIntelNetBurst®microarchitecture.ThePentium4processoron90nmprocessinthe775-landpackageusesFlipChipLandGr

IntelIntel Corporation

英特尔

Intel

PISTONSEALS

DESCRIPTION TheBECA530profileisadoubleacting compositepistonsealcomposedofa pre-tightenedrubbersquareringand aspecificpolyurethanefrictionring. APPLICATIONS Agriculture Lightandmedium-sizedindustry Machinetools Materialhandling/Lifting

FRANCEJOINT

France Joint

FRANCEJOINT

Security&Sound,#18-20c,BC,CMR

ProductDescription Security&SoundCable,Riser-CMR,20-18AWGstrandedbarecopperconductorswithPVCinsulation,PVCjacketwithripcord

BELDENBelden Inc.

百通电缆设计科技有限公司

BELDEN

Intel짰Solid-StateDrive530Series(2.5-inch)

文件:481.68 Kbytes Page:27 Pages

IntelIntel Corporation

英特尔

Intel

LED

文件:113.24 Kbytes Page:3 Pages

HB

HB Electronic Components

HB

IRF530NS产品属性

  • 类型

    描述

  • 型号

    IRF530NS

  • 功能描述

    MOSFET N-CH 100V 17A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-5 11:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-263
8816
保证进口原装现货假一赔十
最新
2000
原装正品现货
IR
23+
TO-263
2400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
24+
TO-263
3000
只做原厂渠道 可追溯货源
VBsemi(台湾微碧)
2447
TO-263
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
23+
52497
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
23+
TO-263
50000
全新原装正品现货,支持订货
INFINEON/英飞凌
20+
TO-263
2400
进口原装假一赔十支持含税
INFINEON
24+
TO-263
8540
只做原装正品现货或订货假一赔十!
IR
24+
TO-263
90000
一级代理商进口原装现货、价格合理

IRF530NS芯片相关品牌

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  • TDK
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