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IRF530NSTRRPBF中文资料
IRF530NSTRRPBF数据手册规格书PDF详情
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRF530NSTRRPBF产品属性
- 类型
描述
- 型号
IRF530NSTRRPBF
- 功能描述
MOSFET 100V 1 N-CH HEXFET 90mOhms 24.7nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IOR |
25+23+ |
TO263 |
26899 |
绝对原装正品全新进口深圳现货 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
Infineon Technologies |
21+ |
D2PAK |
1600 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
IOR |
23+ |
TO263 |
10500 |
全新原装现货,假一赔十 |
|||
INFINEON/英飞凌 |
2447 |
D2-PAK(TO-263) |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON |
25+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
INFINEON/英飞凌 |
2022+ |
D2-PAK(TO-263) |
8000 |
只做原装支持实单,有单必成。 |
|||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
Infineon Technologies |
23+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原装正品，支持实单 |
IRF530NSTRRPBF 价格
参考价格：￥4.5114
IRF530NSTRRPBF 资料下载更多...
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