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IRF530N价格
参考价格:¥1.7499
型号:IRF530NPBF 品牌:INTERNATIONAL 备注:这里有IRF530N多少钱,2024年最近7天走势,今日出价,今日竞价,IRF530N批发/采购报价,IRF530N行情走势销售排行榜,IRF530N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF530N | N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.TheIRF530NissuppliedintheSOT78(TO220AB)conventionalleadedpackage. 1.’Trench’technology 2.Lowon-stateresistance 3.Fastswitching 4. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
IRF530N | PowerMOSFET(Vdss=100V,Rds(on)=90mohm,Id=17A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF530N | 22A,100V,0.064Ohm,N-ChannelPowerMOSFET Features •UltraLowOn-Resistance -rDS(ON)=0.064Ω,VGS=10V •SimulationModels -TemperatureCompensatedPSPICE™andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.intersil.com •PeakCurrentvsPulseWidthCurve •UISRatingCurve | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF530N | N-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.09Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-262package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel100-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel100-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | |||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor 文件:338.45 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:284.9 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:189.55 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:189.55 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:284.9 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:284.9 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Pentium4ProcessorsSupportingHyper-ThreadingTechnology Introduction TheIntel®Pentium®4processoron90nmprocessinthe775-landpackageisafollowontothePentium4processorinthe478-pinpackagewithenhancementstotheIntelNetBurst®microarchitecture.ThePentium4processoron90nmprocessinthe775-landpackageusesFlipChipLandGr | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
Intel짰Solid-StateDrive530Series(2.5-inch) 文件:481.68 Kbytes Page:27 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
LED 文件:113.24 Kbytes Page:3 Pages | HBHB Electronic Components HB Electronic Components | |||
Singlecolor 文件:1.7202 Mbytes Page:11 Pages | HBHB Electronic Components HB Electronic Components | |||
low-loss,compact,andeconomicalsurface-acoustic-wave(SAW)filter 文件:74.99 Kbytes Page:3 Pages | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 |
IRF530N产品属性
- 类型
描述
- 型号
IRF530N
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
21+ |
TO-220AB |
900000 |
原装正品现货/订货 价格优惠 |
||||
IOR |
TO263 |
68900 |
原包原标签100%进口原装常备现货! |
||||
Infineon(英飞凌) |
23+ |
TO-263 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
Infineon Technologies |
23+ |
D2PAK |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INFINEON/IR |
1907+ |
NA |
26100 |
20年老字号,原装优势长期供货 |
|||
23+ |
TO220 |
20000 |
原厂原装正品现货 |
||||
INFINEON/英飞凌 |
2022+ |
原厂封装 |
25000 |
100%进口原装正品现货,公司原装现货众多欢迎加微信咨 |
|||
INFINEON/英飞凌 |
22+ |
TO-220-3 |
12680 |
||||
INFINEON/英飞凌 |
23+ |
TO-263 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
IRF530N规格书下载地址
IRF530N参数引脚图相关
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IRF530N数据表相关新闻
IRF5305PBF
原装进口代理
2022-10-19IRF540NPBF
全新原装现货支持第三方机构验证
2022-10-19IRF540NPBF
www.jskj-ic.com
2021-9-10IRF5305SPBF
www.jskj-ic.com
2021-8-23IRF540N
IRF540N,当天发货0755-82732291全新原装现货或门市自取.
2020-10-29IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
IRF521,IRF523,IRF511,IRF512,IRF512S2532,IRF540,IRF540P2,IRF540RP2,IRF541,IRF542,IRF543,IRF531,IRF532,IRF640,IRF640R,IRF640S2470
2019-12-17
DdatasheetPDF页码索引
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