Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package

Features •Fast-recoverybodydiode •WorldwidebestRDS(on)perareaamongsilicon-basedfastrecoverydevices •Lowgatecharge,inputcapacitanceandresistance •100avalanchetested •Extremelyhighdv/dtruggedness Description ThisN-channelPowerMOSFETisbasedonthemostinnovat

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.012Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTEDCHARA

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.012Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTEDCHARA

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■TYPICALRDS(on)=0.0172 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■VERYLOWRDS(on) ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEE

N-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkablema

N - CHANNEL 30V - 0.009 ohm - 60A - T0-220 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearema

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSizestrip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkable

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSizestrip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkable

N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronisunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

N - CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronisunique”SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

N-CHANNEL 30V - 0.008 ohm - 60A TO-220 STripFET POWER MOSFET

ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize™”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkablemanufac

N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET??POWER MOSFET

DESCRIPTION ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersforTelecomandComputerapp

N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II™ Power MOSFET

Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFETprocesshas specificallybeendesignedtominimizeinput capacitanceandgatecharge.Itistherefore suitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecom andComputer

N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET??POWER MOSFET

DESCRIPTION ThisPowerMosfetseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiencyisolatedDC-DCconvertersforTelecomandComputerapp

N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II™ Power MOSFET

Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFETprocesshas specificallybeendesignedtominimizeinput capacitanceandgatecharge.Itistherefore suitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecom andComputer

N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET??II POWER MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecomandComputera

N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET??II POWER MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecomandComputera

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize™stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET™processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecom

N - CHANNEL CLAMPED 10mohm - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

DESCRIPTION ThisfullyclampedMosfetisproducedbyusingthelatestadvancedCompany’sMeshOverlayprocesswhichisbasedonanovelstriplayout.Theinherentbenefitsofthenewtechnologycoupledwiththeextraclampingcapabilitiesmakethisproductparticularlysuitablefortheharshest

N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY??MOSFET

Description ThisfullyclampedPowerMOSFETisproducedbyusingthelatestadvancedCompany’sMeshOverlayprocesswhichisbasedonanovelstriplayout.Theinherentbenefitsofthenewtechnologycoupledwiththeextraclampingcapabilitiesmakethisproductparticularlysuitable forthe

N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

Description ThisfullyclampedMOSFETisproducedbyusingthelatestadvancedCompany’sMeshOverlayprocesswhichisbasedonanovelstriplayout.Theinherentbenefitsofthenewtechnologycoupledwiththeextraclampingcapabilitiesmakethisproductparticularlysuitablefortheharshest

Super high dense cell design for extremely low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package

Features •WorldwidebestFOMRDS(on)*Qgamongsilicon-baseddevices •HigherVDSSrating •Higherdv/dtcapability •Excellentswitchingperformance •Easytodrive •100avalanchetested Description ThisN-channelPowerMOSFETisbasedonthemostinnovativesuper-junction MDmeshM9t

N-channel 650 V, 128 m typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Features •WorldwidebestFOMRDS(on)*Qgamongsilicon-baseddevices •HigherVDSSrating •Higherdv/dtcapability •Excellentswitchingperformance •Easytodrive •100avalanchetested •Zener-protected Description ThisN-channelPowerMOSFETisbasedonthemostinnovativesuper-ju

N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Description ThisN-channelPowerMOSFETisbasedonthemostinnovativesuper-junction MDmeshM9technology,suitableformedium/highvoltageMOSFETsfeaturingvery lowRDS(on)perarea.ThesiliconbasedM9technologybenefitsfromamulti-drain manufacturingprocesswhichallowsanenhanced

N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package

Description ThisN-channelPowerMOSFETisbasedonthemostinnovativesuper-junction MDmeshM9technology,suitableformedium/highvoltageMOSFETsfeaturingvery lowRDS(on)perarea.ThesiliconbasedM9technologybenefitsfromamulti-drain manufacturingprocesswhichallowsanenhanced

N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”™ strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea

N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh?줚I MOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswitchingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1

N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh?줚I MOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswitchingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■TYPICALRDS(on)=0.7Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS ■INDUST

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■TYPICALRDS(on)=0.7Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCONTROL,AUDIOAMPLIFIERS ■INDUST

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.93Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.93Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS)

Extremely low gate charge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh™M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency

Zener-protected

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhighef

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptmizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRos(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRos(

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(o

N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRos(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRos(

N-CHANNEL 250V - 0.9ohm - 6A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

N-CHANNEL 250V - 0.9ohm - 6A TO-220/TO-220FP PowerMesh MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pe

N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pe

N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?줚I MOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=1.