Features

• Fast-recovery body diode

• Worldwide best RDS(on) per area among silicon-based fast recovery devices

• Low gate charge, input capacitance and resistance

• 100 avalanche tested

• Extremely high dv/dt ruggedness

Description

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring

very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based

DM9 technology benefits from a multi-drain manufacturing process which allows

an enhanced device structure. The fast-recovery diode featuring very low recovery

charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power

MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS

phase-shift converters.

Applications

• Power supplies and converters

• LLC resonant converter