N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.93 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.93 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS)

Fast Switching Speed

文件：49.69 Kbytes Page：2 Pages

6 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：172.01 Kbytes Page：6 Pages

6A, 500V N-CHANNEL POWER MOSFET

文件：172.07 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：309.05 Kbytes Page：2 Pages

500V,5.3A N-Channel MOSFET

文件：495.16 Kbytes Page：6 Pages