位置：首页 > IC中文资料第1185页 > STP60NE06-16
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP60NE06-16 | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 |   | |
STP60NE06-16 | N-Channel 60-V (D-S) MOSFET 文件：981.42 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
STP60NE06-16 | isc N-Channel MOSFET Transistor 文件：245.27 Kbytes Page：2 Pages | ISC 无锡固电 | | |
STP60NE06-16 | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ” Single Feature Siz™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable | STMICROELECTRONICS 意法半导体 | |
STP60NE06-16产品属性
- 类型
描述
- 型号
STP60NE06-16
- 功能描述
MOSFET N-Ch 60 Volt 60 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
NA |
50 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
ST |
25+23+ |
TO-220 |
29873 |
绝对原装正品全新进口深圳现货 |
|||
ST |
9849 |
383 |
公司优势库存 热卖中! |
||||
ST |
23+ |
TO-220 |
8795 |
||||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
ST |
17+ |
TO-220 |
6200 |
||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
24+ |
TO-220-3 |
8866 |
||||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
25+ |
TO-220 |
17775 |
只做原装进口!正品支持实单! |
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STP60NE06-16规格书下载地址
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DdatasheetPDF页码索引
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