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型号 功能描述 生产厂家 企业 LOGO 操作
STP60N06FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■TYPICAL RDS(on) = 0.0172 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■LOW GATE CHARGE ■HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ VERY LOW RDS(on) ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEE

STMICROELECTRONICS

意法半导体

TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components wit

MOTOROLA

摩托罗拉

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

MOTOROLA

摩托罗拉

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

MOTOROLA

摩托罗拉

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP60N06LT is su

PHILIPS

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

PHILIPS

飞利浦

STP60N06FI产品属性

  • 类型

    描述

  • 型号

    STP60N06FI

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 32A I(D) | TO-220VAR

更新时间:2026-3-18 20:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
SR
21+
TO220
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
22+
TO2203
9000
原厂渠道,现货配单
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
ST/意法
23+
TO220ABNONISOL
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
26+
TO-220F
60000
只有原装 可配单
VBsemi
18+
TO-220
85600
保证进口原装可开17%增值税发票
ST
24+
TO-220F
7500
原装现货热卖
ST
23+
TO-220F
6000
专做原装正品,假一罚百!
ST
23+
TO-220
16900
正规渠道,只有原装!

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