N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■TYPICAL RDS(on) = 0.0172 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■LOW GATE CHARGE ■HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ VERY LOW RDS(on) ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEE

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.012 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ VERY LOW RDS (on) ■ APPLICATION ORIENTED CHARA

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■TYPICAL RDS(on) = 0.0172 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■LOW GATE CHARGE ■HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ VERY LOW RDS(on) ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEE

Isc N-Channel MOSFET Transistor

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N-Channel Enhancement Mode Power MOSFET

Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

60A, 60V N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

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N-Channel 60-V (D-S) MOSFET

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