N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 30 V, 0.0072 廓, 48 A DPAK, IPAK, TO-220 STripFET??V Power MOSFET

文件：391.92 Kbytes Page：16 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 30 V, 0.0072 廓, 48 A - DPAK - IPAK STripFET??V Power MOSFET

Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Ver

N-Channel 30-V (D-S) MOSFET

文件：959.98 Kbytes Page：8 Pages

N-channel 30 V, 0.0072 廓, 48 A DPAK, IPAK, TO-220 STripFET??V Power MOSFET

文件：391.92 Kbytes Page：16 Pages