DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.009 Ω

■ AVALANCE RUGGED TECHNOLOGY

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100 °C

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ 175 oC OPERATING TEMPERATURE

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT