isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.023Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom

N沟道100V - 0.019Ohm - 80A D2PAK/TO-220/I2PAK STripFET™ II功率MOSFET

This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applica • Exceptional dv/dt capability \n• 100% avalanche tested;

N-Channel MOSFET uses advanced trench technology

文件：942.12 Kbytes Page：3 Pages

N-channel 100V - 0.019廓 - 80A - TO-220 - D2PAK - I2PAK STripFET??II Power MOSFET

文件：370.17 Kbytes Page：15 Pages

N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom

N-channel 100V - 0.019廓 - 80A - TO-220 - D2PAK - I2PAK STripFET??II Power MOSFET

文件：370.17 Kbytes Page：15 Pages