isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer app

N沟道60V - 0.014 Ohm - 60A - TO-220 StripFET(TM) II MOSFET

N-channel 60V - 0.014廓 - 60A TO-220 STripFET II??Power MOSFET

文件：277.54 Kbytes Page：12 Pages

N-Channel 60-V (D-S) MOSFET

文件：981.32 Kbytes Page：7 Pages

N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II™ Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer

N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer app

N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II™ Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer

N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.014Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET??II POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-channel 60V - 0.014廓 - 60A TO-220 STripFET II??Power MOSFET

文件：277.54 Kbytes Page：12 Pages

N-Channel 60-V (D-S) MOSFET

文件：925.99 Kbytes Page：7 Pages

N沟道60V - 0.014Ohm - 60A - TO-220FP StripFET(TM) II功率MOSFET

Isc N-Channel MOSFET Transistor

文件：313.44 Kbytes Page：2 Pages

Isc N-Channel MOSFET Transistor

文件：317.62 Kbytes Page：2 Pages

N-channel 60V - 0.012廓 - 60A - TO-220/D2PAK/TO-220FP STripFET??II Power MOSFET

文件：516.52 Kbytes Page：16 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.5818 Mbytes Page：5 Pages

N沟道60 V、0.012 Ohm典型值、60 A STripFET(TM) II功率MOSFET，TO-220封装

N-Channel 60-V (D-S) MOSFET

文件：981.29 Kbytes Page：7 Pages

N-channel 60V - 0.012廓 - 60A - TO-220/D2PAK/TO-220FP STripFET??II Power MOSFET

文件：516.52 Kbytes Page：16 Pages

isc N-Channel MOSFET Transistor

DESCRIPTION Suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements . FEATURES ·Drain Current –ID=60A@ TC=25℃ ·Drain Source Voltage : VDSS= 6

N-channel 60V - 0.014ohm - 60A - DPAK

Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-channel 60V - 0.014廓 - 60A - D2PAK/I2PAK STripFET??II Power MOSFET

文件：421.78 Kbytes Page：14 Pages

N-Channel 60-V (D-S) MOSFET

文件：980.07 Kbytes Page：7 Pages

N-channel 60V - 0.014廓 - 60A TO-220 STripFET II??Power MOSFET

文件：277.54 Kbytes Page：12 Pages