丝印代码：P65NF06；N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

N沟道60 V、0.0115 Ohm、60 A TO-220 STripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufact • Standard level gate drive \n• 100% avalanche tested;

N-Channel 60-V (D-S) MOSFET

文件：957.04 Kbytes Page：7 Pages

isc N-Channel MOSFET Transistor

文件：318.58 Kbytes Page：2 Pages

丝印代码：D65NF06；N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

isc N-Channel MOSFET Transistor

文件：320.49 Kbytes Page：2 Pages