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IRFD价格
参考价格：￥3.6091
型号：IRFD010PBF 品牌：Vishay 备注：这里有IRFD多少钱，2025年最近7天走势，今日出价，今日竞价，IRFD批发/采购报价，IRFD行情走势销售排行榜，IRFD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HEXFET TRANSISTORS N-CHANNEL HEXDIP 50 Volts, 0.20 Ohm, 1-Watt HEXDIP | IRF |   | ||
HEXFET TRANSISTORS N-CHANNEL HEXDIP 50 Volts, 0.20 Ohm, 1-Watt HEXDIP | IRF | | ||
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A)
| IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET TRANSISTORS N-CHANNEL HEXDIP 50 Volt, 0.10 Ohm, 1-Watt HEXDIP HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieves very low on-state resistance combined with high transconductance and extreme device rugg | IRF | | ||
Power MOSFET DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • For automatic insertion • Compact, end stackable • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP technology is the key to Vishay’s adva | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • For automatic insertion • Compact, end stackable • Fast switching • Ease of paralleling • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP technology is the key to Vishay’s adva | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET TRANSISTORS N-CHANNEL HEXDIP 50 Volt, 0.10 Ohm, 1-Watt HEXDIP HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieves very low on-state resistance combined with high transconductance and extreme device rugg | IRF | | ||
Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)
| IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • For Automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • For Automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third ge | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET
| IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A)
| IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat | VishayVishay Siliconix 威世威世科技公司 | | ||
1A, 100V, 0.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching | Intersil | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C Operating Temperature • Fast switching and ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C Operating Temperature • Fast switching and ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET
| IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat | VishayVishay Siliconix 威世威世科技公司 | | ||
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR POWER-MOSFET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switchi | GESS | | ||
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR POWER-MOSFET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switchi | GESS | | ||
Power MOSFET FEATURES • For automatic insertion • Compact plastic package • End stackable • Fast switching • Low drive current • Easily paralleled • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP t | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • For automatic insertion • Compact plastic package • End stackable • Fast switching • Low drive current • Easily paralleled • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP t | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g | VishayVishay Siliconix 威世威世科技公司 | | ||
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c | Intersil | | ||
Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multip | IRF | | ||
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c | Fairchild 仙童半导体 | | ||
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs Description These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul | HARRIS | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple comb | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertable case style which can be stacked in multip | IRF | | ||
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs Description These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul | HARRIS | | ||
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs Description These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul | HARRIS | | ||
1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs Description These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul | HARRIS | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third g | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion | VishayVishay Siliconix 威世威世科技公司 | | ||
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Th | Intersil | | ||
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Th | Intersil | | ||
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Th | Intersil | | ||
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Th | Intersil | | ||
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A) DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in | IRF | | ||
0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c | Intersil | | ||
0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching | HARRIS | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic insertion • End stackable • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third gene | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinat | VishayVishay Siliconix 威世威世科技公司 | | ||
0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching | HARRIS | | ||
0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching | HARRIS | | ||
0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching | HARRIS | |
IRFD产品属性
- 类型
描述
- 型号
IRFD
- 功能描述
MOSFET N-Chan 50V 1.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VIS |
24+ |
DIP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
25+ |
PLCC44 |
18000 |
原厂直接发货进口原装 |
|||
INTERNATIONAL RECTIFIER |
25+ |
238 |
公司优势库存 热卖中! |
||||
VISHAY |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
IR |
25+ |
DIP |
30000 |
代理全新原装现货,价格优势 |
|||
SIL |
23+ |
NA |
5099 |
专做原装正品,假一罚百! |
|||
IR |
22+ |
DIP4 |
8000 |
原装正品支持实单 |
|||
IR |
25+ |
DIP-4 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
NEW |
HEXDIP |
19526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
IRFD芯片相关品牌
IRFD规格书下载地址
IRFD参数引脚图相关
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- IRFD420PBF
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- IRFD224PBF
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- IRFD220
- IRFD212
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- IRFD210PBF
- IRFD210
- IRFD1Z3
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- IRFD123PBF
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- IRFD120PBF
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- IRFD110PBF
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- IRFD024PBF
- IRFD024
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- IRFD020PBF
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- IRFD014PBF
- IRFD014
- IRFD012
- IRFD010PBF
- IRFD010
- IRFC450
- IRFC350
- IRFC250
- IRFC240
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- IRFBG30PBF
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- IRFBG20PBF
- IRFBG20
- IRFBF30PBF
- IRFBF30
- IRFBF20STRRPBF
- IRFBF20STRLPBF
- IRFBF20SPBF
- IRFBF20PBF
- IRFBF20LPBF
- IRFBF20
- IRFBE30STRLPBF
- IRFBE30SPBF
- IRFBE30PBF
- IRFBE30LPBF
- IRFBE30
- IRFBE20PBF
- IRFBE20
- IRFBC42
- IRFBC40STRLPBF
- IRFBC40PBF
- IRFBC40LCPBF
- IRFBC40ASTRLPBF
- IRFBC40ASPBF
- IRFBC40APBF
- IRFBC40
- IRFBC30
- IRFBC20
- IRFB812
- IRFB260
- IRFAG50
- IRFAG40
- IRFAG30
IRFD数据表相关新闻
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18IRFF433，IRFP462，IRFP9140，IRFP9140S2424，IRFP9141，IRFP9143，IRFP9241，IRFP9242，IRFPC40，IRFPC42，IRFPG42，IRFF9222，IRFF9122，IRFF9123，IRFF9130
IRFF433，IRFP462，IRFP9140，IRFP9140S2424，IRFP9141，IRFP9143，IRFP9241，IRFP9242，IRFPC40，IRFPC42，IRFPG42，IRFF9222，IRFF9122，IRFF9123，IRFF9130
2019-12-17IRFH5220TRPBF公司大量全新原装现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-5-5
DdatasheetPDF页码索引
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