POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switchi

Power MOSFET

FEATURES • For automatic insertion • Compact plastic package • End stackable • Fast switching • Low drive current • Easily paralleled • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP t

Compact Plastic Package

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Power MOSFET

Power MOSFET

FEATURES • For automatic insertion • Compact plastic package • End stackable • Fast switching • Low drive current • Easily paralleled • Excellent temperature stability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The HVMDIP t

Power MOSFET

文件：253.48 Kbytes Page：8 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN/YELLOW 2) Cable Assembly 3 Components Cabled a) Twists:

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN/YELLOW 2) Cable Assembly 3 Components Cabled a) Twists:

Easy Identification and Tracing with 10-color Cable

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1/4 ENCLOSED PHONE JACKS

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POWER DIVIDERS / COMBINERS

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