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IRFD120中文资料
IRFD120数据手册规格书PDF详情
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• For automatic insertion
• End stackable
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1 pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
IRFD120产品属性
- 类型
描述
- 型号
IRFD120
- 功能描述
MOSFET 100V Single N-Channel HEXFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY |
24+ |
DIP-4 |
20540 |
保证进口原装现货假一赔十 |
|||
VISHAY |
25+ |
DIP-4 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY |
24+ |
N/A |
15000 |
全新原装的现货 |
|||
VISHAY |
15+ |
原厂原装 |
11300 |
进口原装现货假一赔十 |
|||
VISHAY |
23+ |
DIP-4 |
65400 |
||||
VISHAY |
2021+ |
HVMDIP |
9450 |
原装现货。 |
|||
VISHAY |
21+/22+ |
331500 |
HVMDIP-4 (HEXDIP-4) |
||||
VISHAY |
22+ |
原厂封装 |
15850 |
原装正品,实单请联系 |
|||
VISHAY |
23+ |
HVMDIP-4 (HEXDIP-4) |
295000 |
原装现货支持送检 |
|||
VISHAY |
24+ |
HVMDIP |
20000 |
原装正品支持实单 |
IRFD120PBF 价格
参考价格:¥1.6153
IRFD120 资料下载更多...
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Datasheet数据表PDF页码索引
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