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IRFD022中文资料
IRFD022数据手册规格书PDF详情
50 Volt, 0.10 Ohm, 1-Watt HEXDIP
HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HEXFETs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.
The HVMDIP 4-pin, Dual-In-Line Package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desirable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the state-of-the-art in power device packaging.
FEATURES
■ For Automatic Insertion
■ Compact, End Stackable
■ Fast Switching
■ Low Drive Current
■ Easily Paralleled
■ Excellent Temperature Stability
IRFD022产品属性
- 类型
描述
- 型号
IRFD022
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2.2A I(D) | TO-250VAR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IRFD022 |
12 |
12 |
|||||
IR |
22+ |
DIP4 |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
23+ |
DIP |
8000 |
只做原装现货 |
|||
IR |
23+ |
DIP |
7000 |
||||
SIL |
06+ |
原厂原装 |
7116 |
只做全新原装真实现货供应 |
|||
24+ |
1100 |
||||||
IR |
21+ |
DIP |
10000 |
原装现货假一罚十 |
|||
IR |
23+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
24+/25+ |
63 |
原装正品现货库存价优 |
||||
IR |
25+ |
DIP-4 |
2560 |
绝对原装!现货热卖! |
IRFD022 资料下载更多...
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