1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs

Description These are advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regul

1 1/16

FEATURES • Gangable up to 6 sections • Extra taps on request • Bushing or servo mount types available • Ohmic value range: 5  up to 100 k • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

102/122 Series Circuit Board Mount Fuse Clips for 1/4” Diameter Fuses

文件：884.55 Kbytes Page：2 Pages

Pin vices

文件：22.35 Kbytes Page：1 Pages

Socket Outlets

文件：1.57505 Mbytes Page：4 Pages

General Purpose Tweezers

文件：3.67611 Mbytes Page：4 Pages