位置:IRFD112 > IRFD112详情

IRFD112中文资料

厂家型号

IRFD112

文件大小

112.88Kbytes

页面数量

2

功能描述

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

- Bulk

数据手册

下载地址一下载地址二

生产厂商

GESS

IRFD112数据手册规格书PDF详情

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

IRFD112产品属性

  • 类型

    描述

  • 型号

    IRFD112

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2020-4-2 17:49:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR-VISHAY
11+
DIP4
19285
原装现货
IR
22+
16+
6000
终端可免费供样,支持BOM配单
IR
23+
16+
8000
只做原装现货
IR
23+
16+
7000
24+
N/A
72000
一级代理-主营优势-实惠价格-不悔选择
IR-VISHAY
25+
DIP4
19285
全新原装正品支持含税
IR-VISHAY
23+
DIP4
19286
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
06+
原厂原装
4483
只做全新原装真实现货供应
IR
25+
PLCC44
18000
原厂直接发货进口原装
HARRIS
24+/25+
70
原装正品现货库存价优