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IRFD123中文资料
IRFD123数据手册规格书PDF详情
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• For automatic insertion
• End stackable
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1 pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
IRFD123产品属性
- 类型
描述
- 型号
IRFD123
- 功能描述
MOSFET N-Chan 100V 1.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY(威世) |
24+ |
HVMDIP-4 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY/威世 |
2427+ |
DIP |
8540 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
25+23+ |
DIP-4 |
27001 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
1923+ |
DIP-4 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
VISHAY |
23+24 |
DIP-4 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
VISHAY/威世 |
23+ |
DIP-4 |
6000 |
原装正品,支持实单 |
|||
VISHAY/威世 |
22+ |
DIP-4 |
6000 |
十年配单,只做原装 |
|||
MOT |
2021+ |
DIP-4 |
6800 |
原厂原装,欢迎咨询 |
|||
mot |
24+ |
500000 |
行业低价,代理渠道 |
||||
IR |
22+ |
HD-1 |
8000 |
原装正品支持实单 |
IRFD123PBF 价格
参考价格:¥3.6091
IRFD123 资料下载更多...
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Datasheet数据表PDF页码索引
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