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型号 功能描述 生产厂家 企业 LOGO 操作
IRFD112

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switchi

GESS

IRFD112

Power MOSFET field effect power transistor.

GESS

JFET Chopper Transistor (N-Channel- Depletion)

JFET Chopper Transistor N–Channel — Depletion

MOTOROLA

摩托罗拉

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

MOTOROLA

摩托罗拉

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA

摩托罗拉

POWER TRANSISTORS(2.0A,60-100V,50W)

MOSPEC

统懋

Operational Amplifiers

文件:200.55 Kbytes Page:6 Pages

NSC

国半

IRFD112产品属性

  • 类型

    描述

  • 型号

    IRFD112

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2026-8-4 12:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR-VISHAY
23+
DIP4
19286
原厂授权一级代理,专业海外优势订货,价格优势、品种
TI
25+
DIP-4
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
TI
25+
DIP-4
20948
样件支持,可原厂排单订货!
26+
N/A
72000
一级代理-主营优势-实惠价格-不悔选择
IR
23+
16+
8000
只做原装现货
IR
22+
16+
6000
终端可免费供样,支持BOM配单
IR-VISHAY
25+
DIP4
19285
全新原装正品支持含税
IR
23+
16+
7000
IR-VISHAY
11+
DIP4
19286
原装现货

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