0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching

Shuguang Vacuum Tube 211

DESCRIPTION Directed heat cathode, 211 triode can be used in class A, B, C amplifying stage. 211 vacuum tube is compatible with GL-211, UV-211 and can be replaced each other.

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Modular Radio Telemetry System

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M8 Female 4 Pin Field Attachable

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Direct replacement for T3 쩌 Midget Edison Screw E10

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