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TPS1晶体管资料

TPS100别名：TPS100三极管、TPS100晶体管、TPS100晶体三极管
TPS100生产厂家：
TPS100制作材料：Si-NPN
TPS100性质：
TPS100封装形式：
TPS100极限工作电压：180V
TPS100最大电流允许值：0.5A
TPS100最大工作频率：<1MHZ或未知
TPS100引脚数：
TPS100最大耗散功率：0.625W
TPS100放大倍数：
TPS100图片代号：NO
TPS100vtest：180
TPS100htest：999900
TPS100atest：0.5
TPS100wtest：0.625

TPS100代换 TPS100用什么型号代替：3DG182D,

TPS1价格

参考价格：￥5.0226

型号：TPS1100D 品牌：TI 备注：这里有TPS1多少钱，2025年最近7天走势，今日出价，今日竞价，TPS1批发/采购报价，TPS1行情走势销售排行榜，TPS1报价。

型号	功能描述	生产厂家企业	LOGO
TPS101	Outdoor Single Gang Socket Features & Benefits 13 amp single gang socket 2 x earth terminals in back box for continuity IP55 weatherproof rating (when lid closed) Impact resistant housing Spring back socket lid cover Suitable for all BS 13 amp plugs	TIMEGUARD	TIMEGUARD
TPS1100	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100D	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100D.A	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100DR	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100DR.A	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100DR.B	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100PW	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100PW.A	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100PW.B	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100PWLE	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100PWR	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100PWR.A	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1100Y	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc	TI 德州仪器	TI
TPS1101	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1101D	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1101D.A	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1101-D32	Low Capacitance Bi-directional ESD DIODE Features \| o Low operating voltage: 1V « Ultra low capacitance: 0.2pF (Typ) « Ultra low leakage: nA level o Low clamping voltage IEC 61000-4-2 (ESD) immunity test Air discharge: £15kV Contact discharge: +12kV/ —~IEC61000-4-4 (EFT) 40A (5/50ns) —~IEC61000-4-5 (Lightning) 4A (8/20ps) o 2	TECHPUBLIC 台舟电子	TECHPUBLIC
TPS1101DR	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1101DR.A	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1101PWLE	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1101PWR	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1101PWR.A	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1101PWR.B	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1101Y	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c	TI 德州仪器	TI
TPS1103-D32	Low Capacitance Bi-directional ESD DIODE Features o Low operating voltage: 5V » Ultra low capacitance: 0.08pF(typ) Ultra low leakage: nA level o Low clamping voltage o —IEC 61000-4-2 (ESD) immunity test Air discharge: +12kV/ Contact discharge: +8kV —IEC61000-4-4 (EFT) 40A (5/50ns) ~IEC61000-4-5 (Lightning) 2.5A (8/20	TECHPUBLIC 台舟电子	TECHPUBLIC
TPS1120	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS1120D	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS1120D.A	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS1120D.B	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS1120DR	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS1120DR.A	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS1120DR.A	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS1120DR.B	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS1120DR.B	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS1120Y	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have	TI 德州仪器	TI
TPS12000QDGXRQ1	TPS1200-Q1 45V, Automotive Low IQ Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi	TI 德州仪器	TI
TPS1200-Q1	TPS1200-Q1 45-V, Automotive Low IQ Smart High Side Driver with Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi	TI 德州仪器	TI
TPS1200-Q1	TPS1200-Q1 45V, Automotive Low IQ Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi	TI 德州仪器	TI
TPS1200-Q1_V01	TPS1200-Q1 45V, Automotive Low IQ Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi	TI 德州仪器	TI
TPS12100-Q1	TPS1210-Q1 45-V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute	TI 德州仪器	TI
TPS12100-Q1	TPS1210-Q1 45V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi	TI 德州仪器	TI
TPS12100QDGXRQ1	TPS1210-Q1 45V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi	TI 德州仪器	TI
TPS12101-Q1	TPS1210-Q1 45-V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute	TI 德州仪器	TI
TPS12101-Q1	TPS1210-Q1 45V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi	TI 德州仪器	TI
TPS1210-Q1	TPS1210-Q1 45-V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute	TI 德州仪器	TI
TPS1210-Q1	TPS1210-Q1 45V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi	TI 德州仪器	TI
TPS1210-Q1_V01	TPS1210-Q1 45V, Automotive Low IQ, Back-to-Back MOSFET Smart High Side Driver With Short-Circuit Protection and Diagnostics 1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi	TI 德州仪器	TI
TPS12110AQDGXRQ1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver With Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute maximum) •	TI 德州仪器	TI
TPS12110AQDGXRQ1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver With Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute maximum) •	TI 德州仪器	TI
TPS12110-Q1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver with Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Functional Safety-Capable – Documentation available to aid functi	TI 德州仪器	TI
TPS12110-Q1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver With Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute maximum) •	TI 德州仪器	TI
TPS12110-Q1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver with Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Functional Safety-Capable – Documentation available to aid functi	TI 德州仪器	TI
TPS12110-Q1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver With Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute maximum) •	TI 德州仪器	TI
TPS12111LQDGXRQ1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver With Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute maximum) •	TI 德州仪器	TI
TPS12111LQDGXRQ1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver With Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute maximum) •	TI 德州仪器	TI
TPS12111-Q1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver with Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Functional Safety-Capable – Documentation available to aid functi	TI 德州仪器	TI
TPS12111-Q1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver with Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Functional Safety-Capable – Documentation available to aid functi	TI 德州仪器	TI
TPS12111-Q1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver With Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute maximum) •	TI 德州仪器	TI
TPS12111-Q1	TPS1211-Q1 45-V, Automotive, Smart High-Side Driver With Protection and Diagnostics 1 Features • AEC-Q100 qualified with the following results – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5-V to 40-V input range (45-V absolute maximum) •	TI 德州仪器	TI

TPS1产品属性

类型
描述
型号
TPS1
制造商
TOTAL-POWER
制造商全称
TOTAL-POWER
功能描述
SWITCHING MODE 90W U CHANNEL POWER SUPPLIES

TPS1供应商更多...

更新时间：2025-12-11 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	TPS12110AQDGXRQ1	TI(德州仪器)	24+	NA/	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市华康联电子科技有限公司	TPS12S521DBTR	TI	23+	NA	20000		询价
深圳市凌锐智能科技有限公司	TPS12S521DBTR	TI	25+	SSOP	3200	原装正品长期现货	询价
上海金庆电子技术有限公司	TPS12-102	VIKING	新		205	全新原装货期两周	询价
瀚佳科技(深圳)有限公司	TPS1550P	TI	24+		16800	绝对原装进口现货假一赔十价格优势!?	询价
深圳市煦洪科技有限公司	TPS12100QDGXRQ1	TI/德州仪器	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳诚思涵科技有限公司	TPS12S521DBTR	TI	23+	SSOP	5000	全新原装,支持实单,非诚勿扰	询价
深圳航星空电子技术有限公司	TPS12S521DBTR	TI	23+	SSOP	3200	公司只做原装，可来电咨询	询价
万三科技(深圳)有限公司	TPS12111LQDGXRQ1	TI(德州仪器)	25+	VSSOP-19	500000	源自原厂成本,高价回收工厂呆滞	询价
深圳市恒科翔业电子有限公司	TPS1211-Q1	TI德州仪器	22+		24000	原装正品现货,实单可谈,量大价优	询价

TPS1芯片相关品牌

TPS1规格书下载地址

TPS1参数引脚图相关

TPS1数据表相关新闻

TPS16632RGET
现货现货现货
2021-5-28
TPP150-128
TPP150-128,当天发货0755-82732291全新原装现货或门市自取.
2020-11-11
TPS16630RGET
TPS1663 60 V，6 A功率限制eFuse 德州仪器（TI）的eFuse可用于热插拔和电源导轨保护应用
2020-3-9
TPS1120DR公司全新原装现货
瀚佳科技（深圳）有限公司专业进口电子元器件代理商
2019-9-26
TPP150-128
TPP 150-128，TPP150-128，全新原装当天发货或门市自取0755-82732291.
2019-3-7
TPPM0110-正固定电压稳压器
特点 􀀀双电压输出，3.3V ± 3％和1.8 V ± 2％ 􀀀3.3 V 1.8 V输出的输出在所有情况下在2 V 􀀀1.5 - 3.3 V输出电流A负载能力 􀀀300 mA的负载电流能力1.8 V输出 􀀀两个输出过流保护 􀀀热增强型高效热管理的概念包装 􀀀期间保护设备功耗过大的热关断 TPPM0110是打算使用的电源系统中有一个单一的5 V
2013-1-10

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TPP150-128

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DdatasheetPDF页码索引