DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

Customer Specification

Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 28 (7/36) AWG Tinned Copper 0.015 b) Insulation 0.010 Wall, Nom. PVC 0.035 (1) Color Code Alpha Wire Color Code D Cond Color Cond Color Cond Color 1 BLACK 2 RED 2) Cable Assembly 2 Components Cabled a) Twists: 12.0 Twists/

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