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TPS1100价格
参考价格：￥5.0226
型号：TPS1100D 品牌：TI 备注：这里有TPS1100多少钱，2026年最近7天走势，今日出价，今日竞价，TPS1100批发/采购报价，TPS1100行情走势销售排行榜，TPS1100报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TPS1100 | SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 |   | |
TPS1100 | 单路 P 沟道增强-模式 MOSFET The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side swi • Low rDS(on) . . . 0.18 Typ at VGS = -10 V\n• Requires No External VCC\n• VGS(th) = -1.5 V Max\n• ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015\n LinBICMOS is a trademark of Texas Instruments Incorporated; | TI 德州仪器 | | |
TPS1100 | SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：155.28 Kbytes Page：10 Pages | TI 德州仪器 | | |
丝印代码：1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
丝印代码：1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
丝印代码：1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
丝印代码：1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
丝印代码：1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
丝印代码：PS1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
丝印代码：PS1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
丝印代码：PS1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
丝印代码：PS1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
丝印代码：PS1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：700.48 Kbytes Page：14 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：155.28 Kbytes Page：10 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：700.48 Kbytes Page：14 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：700.48 Kbytes Page：14 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：700.48 Kbytes Page：14 Pages | TI 德州仪器 | | ||
P-Channel 12-V (D-S) MOSFET 文件：878.19 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：700.48 Kbytes Page：14 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：155.28 Kbytes Page：10 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：700.48 Kbytes Page：14 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：700.48 Kbytes Page：14 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：700.48 Kbytes Page：14 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：700.48 Kbytes Page：14 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：155.28 Kbytes Page：10 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：155.28 Kbytes Page：10 Pages | TI 德州仪器 | | ||
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS 文件：155.28 Kbytes Page：10 Pages | TI 德州仪器 | | ||
Schottky Power Rectifier(Surface Mount Power Package) Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit | MOTOROLA 摩托罗拉 | | ||
ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot | MOTOROLA 摩托罗拉 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V) Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and | MOSPEC 统懋 | | ||
DUAL SWITCHING REGULATOR CONTROL CIRCUIT SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
DUAL SWITCHING REGULATOR CONTROL CIRCUIT SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |
TPS1100产品属性
- 类型
描述
- 型号
TPS1100
- 制造商
TI
- 制造商全称
Texas Instruments
- 功能描述
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
SOIC-8 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI |
25+ |
TSSOP-8-3.0mm |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
TI/德州仪器 |
25+ |
TSSOP-8 |
32360 |
TI/德州仪器全新特价TPS1100PWR即刻询购立享优惠#长期有货 |
|||
TI/德州仪器 |
2038+ |
SOP8 |
8000 |
原装正品现货假一罚十 |
|||
TI/德州仪器 |
2025+ |
SOP8 |
3500 |
原装进口价格优 请找坤融电子! |
|||
TI |
2021+ |
SOP8 |
9450 |
原装现货。 |
|||
TI/德州仪器 |
25+ |
SOP-8_150mil |
3200 |
强势库存!绝对原装公司现货! |
|||
TI/德州仪器 |
25+ |
SOP-8 |
3766 |
全新原装正品支持含税 |
|||
TI |
25+ |
SOP8 |
26200 |
原装现货,诚信经营! |
TPS1100规格书下载地址
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TPS1100数据表相关新闻
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现货 现货 现货
2021-5-28TPP150-128
TPP150-128,当天发货0755-82732291全新原装现货或门市自取.
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