DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

文件：180.25 Kbytes Page：12 Pages

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

文件：180.25 Kbytes Page：12 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Optocoupler with Phototransistor Output

Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output fo

P-Channel Enhancement-Mode Vertical DMOS Power FETs???

P-Channel Enhancement-Mode Vertical DMOS Power FETs Applications □ Motor controls □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)

N-Channel Enhancement-Mode Vertical DMOS Power FETs???

文件：136.07 Kbytes Page：4 Pages