丝印代码：1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

文件：700.48 Kbytes Page：14 Pages

丝印代码：1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

丝印代码：1100；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

文件：700.48 Kbytes Page：14 Pages

P-Channel 12-V (D-S) MOSFET

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Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N