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型号 功能描述 生产厂家 企业 LOGO 操作
TPS1101DR

丝印代码:1101;SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c

TI

德州仪器

TPS1101DR

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

文件:495.85 Kbytes Page:13 Pages

TI

德州仪器

丝印代码:1101;SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c

TI

德州仪器

P-Channel 12-V (D-S) MOSFET

文件:899.06 Kbytes Page:6 Pages

VBSEMI

微碧半导体

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

文件:495.85 Kbytes Page:13 Pages

TI

德州仪器

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

PHILIPS

飞利浦

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

PHILIPS

飞利浦

Integrated Circuit General Purpose Amp, Mixer, and Oscillator

Features: • General Amplifier Circuit • High Frequency Amplifier • Mixer, OSC and Modulator • Video Amplifier • Recommend RF and IF Amplifier (f = 0 to 100MHz) • AGC is possible

NTE

Universal sync generator USG

GENERAL DESCRIPTION The SAA1101 is a Universal Sync Generator (USG) and is designed for application in video sources such as cameras, film scanners, video generators and associated apparatus. The circuit can be considered as a successor to the SAA1043 sync generator and the SAA1044 subcarrier cou

PHILIPS

飞利浦

WIDE BAND AGC AMPLIFIER GaAs MMIC

文件:337.64 Kbytes Page:15 Pages

NJRC

日本无线

TPS1101DR产品属性

  • 类型

    描述

  • 型号

    TPS1101DR

  • 功能描述

    MOSFET Single P-Ch Enh-Mode MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-18 17:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
2450+
SOP-8
9850
只做原厂原装正品现货或订货假一赔十!
TI/德州仪器
24+
SOP-8
5783
只供应原装正品 欢迎询价
TI
SOP8
3500
一级代理 原装正品假一罚十价格优势长期供货
TI/德州仪器
25+
SOP8
20000
原装
TI
23+
SOP-8
5000
全新原装,支持实单,非诚勿扰
TI
SOP8
1200
正品原装--自家现货-实单可谈
TI/TEXAS
26+
原厂封装
8931
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TI
24+
SOP8
30000
TI一级代理专营品牌绝对进口原装假一赔十
TI/德州仪器
21+
SOP8
10000
只做原装,质量保证
TI
25+
SOP-8
3000
全新原装、诚信经营、公司现货销售!

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