Low rDS(on) . . . 0.18 W Typ at VGS = –10 V

3 V Compatible

Requires No External VCC

TTL and CMOS Compatible Inputs

VGS(th) = –1.5 V Max

Available in Ultrathin TSSOP Package (PW)

ESD Protection Up to 2 kV Per

MIL-STD-883C, Method 3015

description

The TPS1100 is a single P-channel

enhancement-mode MOSFET. The device has

been optimized for 3-V or 5-V power distribution

in battery-powered systems by means of Texas

Instruments LinBiCMOSE process. With a

maximum VGS(th) of –1.5 V and an IDSS of only

0.5 mA, the TPS1100 is the ideal high-side switch

for low-voltage, portable battery-management

systems where maximizing battery life is a primary

concern. The low rDS(on) and excellent ac

characteristics (rise time 10 ns typical) make the

TPS1100 the logical choice for low-voltage

switching applications such as power switches for

pulse-width-modulated (PWM) controllers or

motor/bridge drivers.

The ultrathin thin shrink small-outline package or

TSSOP (PW) version with its smaller footprint and

reduction in height fits in places where other

P-channel MOSFETs cannot. The size advantage

is especially important where board real estate is

at a premium and height restrictions do not allow

for a small-outline integrated circuit (SOIC)

package.